منابع مشابه
Comparison of Conventional 6T SRAM cell and FinFET based 6T SRAM Cell Parameters at 45nm Technology
When working for low power application the main estimation is to reduce leakage components and parameters. This stanza explores a vast link towards low leakage power SRAM cells using new technology and devices. The RAM contains bi-stable cross coupled latch which has V_th higher in write mode access MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and lower V_th in read access mode MO...
متن کاملAnalysis of Leakage Power Reduction in 6T SRAM Cell
On chip cache memories contributes a large fraction to the total power consumption of microprocessor. As technology scales down into d e e p -submicron, leakage power is becoming a dominant source of power consumption. As cache memory is an array structure leakage reduction in just one memory cell can on the whole reduce a large amount of leakage power. In this thesis leakage power of conventio...
متن کاملImplementation of High Reliable 6T SRAM Cell Design
Memory can be formed with the integration of large number of basic storing element called cells. SRAM cell is one of the basic storing unit of volatile semiconductor memory that stores binary logic '1' or '0' bit. Modified read and write circuits were proposed in this paper to address incorrect read and write operations in conventional 6T SRAM cell design available in open literature. Design of...
متن کاملStability Analysis of 6T SRAM Cell at 90nm Technology
SRAM is the most crucial part of memory designs and are imperative in many simple or compound applications that implicate system on chip (SoCs). Power dissipation and stability has now become the most essential area of concern in sub-micron SRAM cell design with continuous technology scaling according to Moore’s law. At latest, retrenchment of channel length MOSFET is directly proportional to t...
متن کاملA Comparative Study of 6T, 8T and 9T SRAM Cell
From the last few decades, the scaling down of CMOS devices have been taking place to achieve better performance in terms of speed, power dissipation, size and reliability. The major area of concern in today‟s CMOS technology is Data retention and leakage current reduction. SRAM (Static Random Access Memory) is memory used to store data. Conventional Static Random Access Memory (SRAM) cells suf...
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ژورنال
عنوان ژورنال: Electronics Letters
سال: 2010
ISSN: 0013-5194
DOI: 10.1049/el.2010.2736